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3 article(s) from Prepelita, Petronela

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

Petronela Prepelita,
Florin Garoi and
Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

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Figure 1: XRD patterns of ZnO thin film samples with different thickness, namely: 200, 250, and 300 nm.

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Figure 2: XPS patterns of SiO₂ thin films: general spectra.

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Figure 3: High-resolution XPS spectra acquired from SiO₂ samples: (a) Si 2p3 and (b) O 1s.

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Figure 4: XPS survey spectra acquired from ZnO films.

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Figure 5: High-resolution (a) Zn 2p3 and (b) O 1s XPS spectra acquired from ZnO samples.

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Figure 6: Cross-sectional SEM images of the cleaved SiO₂ films with measured thickness values of (a) d_SiO2 = ...

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Figure 7: Cross-sectional SEM images of the cleaved ZnO films with measured thickness values of (a) d_ZnO = 20...

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Figure 8: Transmission spectra of thin films with various thickness values (200, 250, and 300 nm): (a) SiO₂ a...

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Figure 9: Extinction coefficient dependence on the wavelength for (a) SiO₂ and (b) ZnO thin films.

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Figure 10: Dependence of (αhν)² = f(hν) on the energy of the incident photons for (a) SiO₂ and (b) ZnO samples...

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Figure 11: Refractive index dependence on the wavelength (dispersion) for (a) SiO₂ and (b) ZnO thin films.

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Figure 12: Photon energy dependence of the (a) real and (b) imaginary parts of permittivity for SiO₂ (i) and Z...

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Full Research Paper

Published 19 Apr 2021

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Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Petronela Prepelita,
Ionel Stavarache,
Doina Craciun,
Florin Garoi,
Catalin Negrila,
Beatrice Gabriela Sbarcea and
Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

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Figure 1: Cross-sectional SEM images of the cleaved as-deposited (a,c,e) and RTA-processed (b,d,f) ITO films,...

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Figure 2: XRD patterns for the as-deposited and RTA-processed ITO samples.

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Figure 3: XPS survey spectra in the range 0–1250 eV acquired from the as-deposited and RTA-treated ITO sample...

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Figure 4: High-resolution a) In 3d, b) Sn 3d and c) O 1s XPS spectra acquired from as-deposited and RTA-treat...

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Figure 5: Optical transmission spectra for the as-deposited and RTA-treated ITO samples with interference max...

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Figure 6: a) Refractive index dependence on the wavelength (dispersion) and b) extinction coefficient depende...

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Figure 7: Dependence of (αhν)² = f(hν) on the energy of the incident photons, for the as-deposited and RTA-tr...

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Figure 8: Optical conductivity dependence on the energy of the incident photons for the as-deposited and RTA-...

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Figure 9: Photon energy dependence of the a) real and b) imaginary part of the complex dielectric permittivit...

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Full Research Paper

Published 25 Jul 2019

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Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Ionel Stavarache,
Valentin Adrian Maraloiu,
Petronela Prepelita and
Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

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Figure 1: X-ray diffractograms of Ge:SiO₂ thin films deposited at 300, 400 and 500 °C.

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Figure 2: HRTEM images of the Ge:SiO₂ thin film co-deposited on a Si substrate at 500 °C: (a) corresponding S...

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Figure 3: Schematic of sample structure and electrical measurement.

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Figure 4: Current density versus voltage characteristics in dark (empty squares) or under integral light (fil...

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Figure 5: The charge carriers transport mechanism described schematically.

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Figure 6: Current density versus voltage characteristics in dark (empty squares) or under integral light (fil...

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Figure 7: Photodetector responsiveness: a) spectral photoresponsivity, for Al/n-Si/Ge:SiO₂/ITO and Al/n-Si/SiO...

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Figure 8: Photovoltaic response speed of the photodetector structure (fabricated at 400 °C) under pulsed (P_in...

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Full Research Paper

Published 21 Oct 2016

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